High temperature, high rate homoepitaxial growth of diamond in an atmospheric pressure flame
作者： K.A. Snail , L.M. Hanssen
DOI: 10.1016/0022-0248(91)90121-K
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摘要: Abstract Homoepitaxial growth of diamond at temperatures in the range 1150–1500°C has been achieved on millimeter sized {100} and {110} natural seed crystals using a laminar, premixed oxygen-acetylene flame air. Growth rates 100–200 μm/h have observed. Microscope naked eye observations show original cylindrical shaped growing into polyhedral with identifiable {100}, {111} faces. examination under optical scanning electron microscopes reveals terraces The deposited is clear exhibits Raman spectra almost identical to that diamond. Laue X-ray diffraction analyses confirmed epitaxial nature growth. deposition reported are highest ever observed for homoepitaxial synthesis low pressures.
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