High Performance and Bendable Few-Layered InSe Photodetectors with Broad Spectral Response
作者： Srinivasa Reddy Tamalampudi , Yi-Ying Lu , Rajesh Kumar U. , Raman Sankar , Chun-Da Liao
DOI: 10.1021/NL500817G
关键词: Photodetection 、 Transistor 、 Substrate (electronics) 、 Crystal 、 Responsivity 、 Polyethylene terephthalate 、 Graphene 、 Materials science 、 Optoelectronics 、 Photodetector
摘要: Two-dimensional crystals with a wealth of exotic dimensional-dependent properties are promising candidates for next-generation ultrathin and flexible optoelectronic devices. For the first time, we demonstrate that few-layered InSe photodetectors, fabricated on both a rigid SiO2/Si substrate and a flexible polyethylene terephthalate (PET) film, are capable of conducting broadband photodetection from the visible to near-infrared region (450–785 nm) with high photoresponsivities of up to 12.3 AW–1 at 450 nm (on SiO2/Si) and 3.9 AW–1 at …
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