Operando SXRD study of the structure and growth process of Cu2S ultra-thin films.

摘要: Electrochemical Atomic Layer Deposition (E-ALD) technique has demonstrated to be a suitable process for growing compound semiconductors, by alternating the under-potential deposition (UPD) of metallic element with UPD non-metallic element. The cycle can repeated several times build up films sub-micrometric thickness. We show that it is possible grow, E-ALD, Cu2S ultra-thin on Ag(111) high structural quality. They well ordered layered crystal structure made pseudohexagonal layers in lower coordination. As reported literature minerals Cu-S compositional field, these are based CuS3 triangular groups, occupied highly mobile Cu ions. This model closely related one low chalcocite. domain size such more than 1000 A lateral and extends crystallinity vertical growth direction 10 nm. E-ALD results almost unstrained films. lead design semiconductors optimal transport proprieties an appropriate doping intra layer. present study enables as efficient synthetic route semiconducting heterostructures tailored properties.