作者: Xinyu Wu , Vishal Saxena , Kehan Zhu , Sakkarapani Balagopal
DOI: 10.1109/TCSII.2015.2456372
关键词: Resistive touchscreen 、 Computer science 、 Spiking neural network 、 Electrical engineering 、 Synapse 、 Neuromorphic engineering 、 CMOS 、 Artificial neural network 、 Electronic engineering 、 Associative learning 、 Resistive random-access memory
摘要: Nanoscale resistive memory devices are expected to fuel dense integration of electronic synapses for large-scale neuromorphic systems. To realize such a brain-inspired computing chip, compact CMOS spiking neuron that performs in situ learning and while driving large number is desired. This brief presents novel leaky integrate-and-fire design implements the dual-mode operation current synaptic drive, with single operational amplifier (opamp) enables crossbar synapses. The proposed was implemented 0.18- $\mu\mbox{m}$ technology. Measurements show neuron's ability drive thousand demonstrate associative learning. circuit occupies small area 0.01 mm 2 has an energy efficiency value 9.3 pJ/spike/synapse.