作者: T. Serrano-Gotarredona , B. Linares-Barranco
DOI: 10.1109/ICECS.2012.6463504
关键词:
摘要: Memristive devices are a promising technology to implement dense learning synapse arrays emulating the high memory capacity and connectivity of biological brains. Recently, implementation STDP in memristive connected spiking neurons have been demonstrated as well dependency form rule on shape applied spike. In this paper, we propose fully CMOS integrate-and-fire neuron generating precisely shaped spike that can be tuned through programmable biases. The is electrical simulations 4×4 array memristors 4 neurons.