AlPSb/InP single heterojunction bipolar transistor on InP substrate for high-speed, high-power applications
作者： Chanh Nguyen , Takyiu Liu , Mehran Matloubian
DOI:
关键词: Mole fraction 、 Common emitter 、 Optoelectronics 、 Epitaxy 、 Substrate (electronics) 、 Heterostructure-emitter bipolar transistor 、 Heterojunction bipolar transistor 、 Power (physics) 、 Semiconductor materials 、 Materials science
摘要: An epitaxial structure and method of manufacture for a single heterojunction bipolar transistor capable being utilized in high-speed high-power applications. Preferably, the comprises an N-type collector made from InP, P-type base emitter semiconductor material approximately 39 mole percent AlP 61 Sb.
lens.org 参考文章(6)
David J. Frank, Ronald F. Marks, Heterojunction bipolar transistor with substantially aligned energy levels ,(1987)
Chris G. Van de Walle, Band lineups and deformation potentials in the model-solid theory. Physical Review B. ,vol. 39, pp. 1871- 1883 ,(1989) , 10.1103/PHYSREVB.39.1871
H. Shimomura, K. Mori, S. Sugou, T. Anan, High-reflectance AlPSb/GaPSb distributed Bragg reflector mirrors on InP grown by gas-source molecular beam epitaxy Electronics Letters. ,vol. 30, pp. 314- 315 ,(1994) , 10.1049/EL:19940230
Riichi C, Mamoru C, Kouhei C, O Patent Division Katoh, O Patent Division Morizuka, O Patent Division Kurata, Heterojunction bipolar transistor ,(1988)
William E. Stanchina, Thomas C. Hasenberg, NPN heterojunction bipolar transistor including antimonide base formed on semi-insulating indium phosphide substrate ,(1993)
William E. Stanchina, Thomas Hasenberg, NPN heterojunction bipolar transistor ,(1993)