Inp collector ingaassb base dhbt device and method of forming the same
作者： Miroslav Micovic , Mehran Matloubian , Daniel P. Doctor
DOI:
关键词: Heterojunction bipolar transistor 、 Conduction band 、 Optoelectronics 、 Doping 、 Common emitter 、 Superlattice 、 Materials science 、 Base (geometry) 、 Depletion region 、 Layer (electronics)
摘要: A Double Heterojunction Bipolar Transistor (DHBT) is disclosed employing a collector (5) of InP, an emitter InP or other material such as InA1As, and base (1) either selected InxGa1-xAsySb1-y compound, which preferably lattice-matched to may be somewhat compressively strained thereto, superlattice mimics the InGaAsSbcompound. When having conduction band non-aligned with that used, base-emitter junction graded using continuous stepped changes in bulk material, chirped superlattice. Doping include one more delta doping layer improve shift discontinuities provided by grading layer, permit wider depletion region.
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