Heterojunction semiconductor devices having a doping interface dipole
作者： Federico Capasso , Alfred Y. Cho
DOI:
关键词: Mean free path 、 Materials science 、 Dipole 、 Semiconductor device 、 Conductivity 、 Homojunction 、 Optoelectronics 、 Interface (computing) 、 Doping 、 Heterojunction
摘要: Heterojunction devices having doping interface dipoles near the heterojunction are disclosed. The comprise two charge sheets of different conductivity type which positioned within a carrier mean free path interface.
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