Planar doped barrier semiconductor device

摘要: Disclosed is a majority carrier rectifying barrier semiconductor device housing planar doped barrier. The fabricated in GaAs by an epitaxial growth process which results n+ -i-p+ -i-n+ structure wherein extremely narrow p+ region positioned adjoining regions of nominally undoped (intrinsic) semiconductive material. widths the and high densities ionized impurities within space charge rectangular triangular electric fields potential barriers, respectively. Independent continuous control height asymmetry current vs. voltage characteristic provided through variation acceptor density widths. Additionally, capacitance substantially constant with respect to bias voltage.