Planar doped barrier transferred electron oscillator

摘要: A transferred electron semiconductor device in the form of an oscillator, for example, is fabricated by a molecular beam epitaxy growth process wherein plurality layers are sequentially grown on planar substrate. pair ohmic contacts formed outer surface substrate and uppermost layer with resulting structure including two distinct intermediate regions, first being drift region adapted to exhibit differential negative resistance due effect, second doped barrier accelerating electrons into upper valley injecting them region. By use more uniform electric field obtained along controlled lower height whereby transfer conduction band satellite can be made occur over much shorter times distances thus extending frequency range operation.