Combined ion implantation and kinetic transport deposition process

摘要: Combined low energy, high density ion implantation and kinetic transport deposition of refractory or other materials is carried out under very vacuum conditions. The process facilitates formation large area, highly doped, shallow semiconductor junctions the associated electrodes. steps preimplantation cleaning, for junction formation, ohmic contact by deposition, postimplantation anneal all are in same chamber. Under vacuum, pre-implantation cleaning annealing semi-conductor substrates accomplished electron bombardment concomitant heating from an annular flood filament. Next a conical beam vaporizes solid source material within evacuated chamber, ionizing some vaporized particles. result plasma expansion including ions which accelerated electrostatically target, atoms kinetically transported toward target to form metalization layer. Additional build-up occurs after complete. Post-implantation using heat targets above threshhold period time short enough so that no undesirable diffusion occurs. then rapidly forced cooled. Repeating another permits different be layered. combined ionimplantation into underlying stratum effectively bonds second previously deposited