Numerical study of turnstile operation in random-multidot-channel field-effect transistor
作者： Hiroya Ikeda , Michiharu Tabe
DOI: 10.1063/1.2189214
关键词: Turnstile 、 Field-effect transistor 、 Transistor 、 Coulomb blockade 、 Physics 、 Randomness 、 Equivalent circuit 、 Condensed matter physics 、 Electron 、 Optoelectronics 、 Communication channel 、 General Physics and Astronomy
摘要: We have numerically studied the single-charge transfer operation in two-dimensional (2D) random-multidot-channel field-effect transistors (FETs) using orthodox theory of Coulomb blockade phenomenon. The randomness multidot structure is reflected gate capacitance (Cg) equivalent circuit, embodying dot-size disorder realistic devices developed our laboratory. It was found that “turnstile operation” meaning individual electron transferred one by from source to drain with a cycle an alternating voltage can be performed both random and homogeneous 2D multidot-channel FETs, although their circuits are significantly different ordinary four-junction turnstile device. By increasing Cg randomness, some show average bias condition (Vg0,Vd) which allows more relaxed. Consequently, FET work as single-electron
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