作者: M. Tabe , R. Nuryadi , D. Moraru , Z.A. Burhanudin , K. Yokoi
DOI: 10.12693/APHYSPOLA.113.811
关键词:
摘要: Recently, there have been increasing demands for controlling individual electrons, photons, and dopants in developing nm scale Si devices. Our most recent results on single-electron nano-devices will be presented. We demonstrated transfer random-tunnel-junctions by a cycle of ac gate bias, detection photons acceptor ions single-hole transistor.