Si Multidot FETs for Single-Electron Transfer and Single-Photon Detection

作者: M. Tabe , R. Nuryadi , D. Moraru , Z.A. Burhanudin , K. Yokoi

DOI: 10.12693/APHYSPOLA.113.811

关键词:

摘要: Recently, there have been increasing demands for controlling individual electrons, photons, and dopants in developing nm scale Si devices. Our most recent results on single-electron nano-devices will be presented. We demonstrated transfer random-tunnel-junctions by a cycle of ac gate bias, detection photons acceptor ions single-hole transistor.

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