Observation of Single Electron-Hole Recombination and Photon-Pumped Current in an Asymmetric Si Single-Electron Transistor
作者： Akira Fujiwara , Yasuo Takahashi , Katsumi Murase
DOI: 10.1103/PHYSREVLETT.78.1532
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摘要: We observed a novel type of photocurrent by investigating Coulomb blockade oscillations around the few-electron regime in an asymmetric Si single-electron transistor. Photoexcitation generates new current peaks below threshold voltage only for one polarity source-drain voltage. Under low excitation, such exhibits intermittent behavior with sudden drops and rises. The phenomena can be ascribed to interplay photogenerated holes tunneling via island. drop is manifestation recombination hole
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