Manipulation of elementary charge in a silicon charge-coupled device.

摘要: The ultimate limit in the operation of an electronic device is manipulation a single charge. Such has been achieved single-electron tunnelling devices1,2. However, these devices are based on multiple tunnel barriers and conductive islands, which complex structures to fabricate. Here we demonstrate another type that can also manipulate elementary charge, but more suitable for large-scale integration. consists two closely packed silicon wire-MOSFETs, commonly used building blocks circuits. We have developed scheme generate store holes channels either MOSFETs. Subsequently, be transferred between MOSFETs at level their exact position monitored. This single-charge transfer device, operated 25 K, effect charge-coupled device3. first realization silicon-based manipulates