A simple method to fabricate single electron devices

摘要: A simple method, based on overlapping the dosage distribution of discretely electron beam written nano-dots, was employed to fabricate nano-structure containing narrow constrictions. From appropriately designed process, in region is just above threshold exposure negative electronbeam resist. Si-based nano-dot with two tunnel junctions called single transistor formed after dry etching and thermal oxidation process since much narrower than diameter nano-dot. The electric characteristic SET found be consistent expected behavior transport through a gated quantum dot. Also, phase diagrams double dot structure were obtained by independently sweeping gates. honeycomb lattice conductance resonances diagram modeled using capacitance equivalent circuit electronic device discussed from measured charging comparing model.