Activation energy in the early stage of electromigration in Al-1% Si/TiN/Ti bamboo lines
作者： I De Munari , A Scorzoni , F Tamarri , F Fantini
DOI: 10.1088/0268-1242/10/3/004
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摘要: The activation energy of electromigration in 'bamboo'-type, passivated Al-1% Si/TiN/Ti lines was determined by means high resolution resistance measurements at wafer level. Both the very early stages, with a nonlinear behaviour resistance, and subsequent characterized an approximately constant rate change, were analysed existing model that correlates mechanical stress evolution. An could be extracted only phase linear increase, where value 0.95 eV found. Diffusion interface between Al-Si barrier metal or passivation responsible for this energy.
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