Degradation and subsequent healing by electromigration in Al‐1 wt % Si thin films
作者： Z. Li , C. L. Bauer , S. Mahajan , A. G. Milnes
DOI: 10.1063/1.351653
关键词: Hillock 、 Stress (mechanics) 、 Electromigration 、 Microstructure 、 Analytical chemistry 、 Scanning electron microscope 、 Electrical resistance and conductance 、 Grain boundary 、 Materials science 、 Mineralogy 、 Electrical resistivity and conductivity
摘要: Electrical resistance of Al‐1 wt % Si thin‐film conductors has been measured as a function time t, temperature, and current polarity in order to investigate both generation recovery (microstructural) damage caused by electromigration. The fractional change electrical ΔR/R is characterized three distinct stages: (i) undetectable during an incubation period τ; (ii) linear increase with t−τ; (iii) abrupt decrease when reversed, followed gradual resumption the previous increase. Examination conductor surface these stages scanning electron microscopy reveals: microstructural damage; (first) holes (then) hillocks; further damage. Results are interpreted stress σ grain boundaries; formation exceeds critical tensile σ+c hillocks comp...
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