An activation energy study of the microstructural changes in Al‐1%Si interconnects
作者： H. Stulens , G. Knuyt , W. De Ceuninck , L. De Schepper , L. Stals
DOI: 10.1063/1.356291
关键词:
摘要: There are several reasons to believe that the microstructural changes in Al‐Si interconnects has be described terms of a spectrum activation energies rather than single energy. In this article, method is presented extract from an isothermal and constant heating rate experiment. The formalism was applied relaxation behavior passivated Al‐1%Si interconnects. analysis shows mechanisms these characterized by narrow spectrum, centered at energy about 1.2 eV.
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