Si single-electron CCD

作者: A. Fujiwara , K. Yamazaki , Y. Takahashi

DOI: 10.1109/IMNC.2001.984197

关键词: Charge (physics)Charge carrierElectronElementary chargeSiliconOptoelectronicsElectric currentMaterials scienceSingle electronQuantum wire

摘要: A charge-coupled device (CCD) that can manipulate single electrons (holes) was fabricated and found to operate successfully. We demonstrated the transfer a hole also detect its position by novel charge sensing method based on electron-hole system in Si quantum wire. This first demonstration of manipulating an elementary Si.

参考文章(1)
Akira Fujiwara, Yasuo Takahashi, Manipulation of elementary charge in a silicon charge-coupled device. Nature. ,vol. 410, pp. 560- 562 ,(2001) , 10.1038/35069023