Silicon single-electron devices

作者: Yasuo Takahashi , Yukinori Ono , Akira Fujiwara , Katsuhiko Nishiguchi , Hiroshi Inokawa

DOI: 10.1007/978-0-387-78689-6_5

关键词:

摘要: Single-electron devices (SEDs) are attracting a lot of attention because their ability to manipulate just one electron. They operate using Coulomb blockade, which occurs in tiny structures made conductive material due electrostatic interactions between confined electrons. Although any kind can be used, silicon is preferable terms integrated circuit applications because, on substrate, SEDs used combination with conventional complementary metal-oxide-semiconductor (CMOS) circuits. In addition, the well-established technologies for fabricating CMOS large-scale circuits employed make these small structures. Silicon two fields: memory and logic. The simple operating principle SEDs, i.e., capacitive coupling, has meant that many kinds logic have been proposed tested. Another important issue accurate control single electron, challenge must met by ultimate electronics. current status silicon-based introduced.

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