Silicon nanodot-array device with multiple gates
作者： Mingyu Jo , Takuya Kaizawa , Masashi Arita , Akira Fujiwara , Kenji Yamazaki
DOI: 10.1016/J.MSSP.2008.12.001
关键词: Capacitive coupling 、 Materials science 、 Gate voltage 、 Nanodot array 、 Silicon 、 Nanotechnology 、 Optoelectronics 、 Silicon on insulator 、 Dot array 、 Multiple input 、 Wafer
摘要: We fabricated a nanodot-array device with multiple input gates on silicon-on-insulator (SOI) wafer by using pattern-dependent oxidation method gates, which embodies new concept of flexible single-electron device. Although the can generate many logic functions owing to capacitive coupling between dots and complicated structural configuration makes it difficult confirm formation nanodot array. For further investigation this kind achieve higher functionality, is important demonstrate experimentally that dot array actually formed. analyzed oscillation-peak shift caused gate voltage change, successfully determined location contributed observed oscillations.
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