Si Nanodot Device Fabricated by Thermal Oxidation and their Applications
作者： Yasuo Takahashi , Ming Yu Jo , Takuya Kaizawa , Yuki Kato , Masashi Arita
DOI: 10.4028/WWW.SCIENTIFIC.NET/KEM.470.175
关键词: Nanodot 、 Thermal oxidation 、 Quantum computer 、 Coulomb blockade 、 Nanowire 、 Materials science 、 Nanotechnology 、 Silicon on insulator 、 Adder 、 Wafer
摘要: Small single-electron devices (SEDs) consisting of many Si nanodots are fabricated on a silicon-on-insulator (SOI) wafer by means pattern-dependent oxidation (PADOX) method. We investigated SEDs from two kinds viewpoint. One is how to fabricate the nanodots, especially coupled which important achieve quantum computers and transfer devices. The other demonstration new applications that tolerate size fluctuation. In order multi-coupled we developed an easy method applying PADOX specially designed nanowire has small constrictions at ends wire. confirmed double-dot formation position in wire analyzing measured electrical characteristics. To high functionality together with low-power consumption tolerance fluctuation, nanodot array device input gates outputs terminals. three-input two-output actually provide such as half adder full adder.
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