Furnace for continuous, high throughput diffusion processes from various diffusion sources

摘要: An open apparatus is described for the processing of planar thin semiconductor substrates, particularly solar cells. The includes a first zone drying and burn-out organic components from solid or liquid based dopant sources pre-applied to substrates. isolated remaining zones by an isolating section prevent cross-contamination between zones. All may be formed quartz tube around which heaters are placed raising temperature inside tube. Each purged with suitable mixture gases, e.g. inert gases such as argon, well oxygen nitrogen. also provided gaseous dopants POCl3 present invention sequential diffusion more than one into Some used driving-in alternatively, other processes, oxidation. method operating use in