FORMATION OF THIN FILM DEVICE
作者： Amemori Kazuhiko , Tsutsumi Shoichi , Takahashi Yoshio
DOI:
关键词: Plasma etching 、 Etching (microfabrication) 、 Composite material 、 Dry etching 、 Substrate (printing) 、 Resist 、 Thin film 、 Materials science 、 Sputtering 、 Argon
摘要: PURPOSE:To increase insulation resistance in each thin film device by performing ion mealing or sputter etching, and then, dry etching plasma using a specified gas according to conductive material that is used for the formation of an insulating substrate film. CONSTITUTION:After 2 formed on 3 process technique, masking done part as required resist 1, unnecessary removed 3, ethcing performed gas. A residual metal, metallic particle abrashed argon re-adheres during reduced compound so be exhaust. Unnecessary metal can thus completely from increased.
lens.org 参考文章(1)
Nagata Mitsuo, MANUFACTURE OF LIQUID CRYSTAL DISPLAY ELEMENT ,(1978)