Profiling hydrogen in materials using ion beams
作者： J.F. Ziegler , C.P. Wu , P. Williams , C.W. White , B. Terreault
DOI: 10.1016/0029-554X(78)90834-0
关键词: Nondestructive analysis 、 Ion beam 、 Semimetal 、 Ranging 、 Silicon 、 Analytical chemistry 、 Materials science 、 Ion 、 Hydrogen 、 Atomic physics 、 Ion implantation
摘要: Abstract Over the last few years many ion beam techniques have been reported for profiling of hydrogen in materials. We evaluated nine these using similar samples ion-implanted into silicon. When possible were analysed two or more to confirm accuracy. report results this work which has produced a consensus profile H silicon is useful as calibration standard. The analytical used capabilities ranging from very high depth resolution ( ≈50 A ) and sensitivity
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