The climb of dislocation loops in zinc

作者:

DOI: 10.1098/RSPA.1966.0181

关键词: Annealing (metallurgy)Rate of climbZincStacking-fault energyMaterials scienceCrystallographyVacancy defectFOIL methodClimbSupersaturationCondensed matter physics

摘要: The annealing behaviour of faulted dislocation loops in quenched zinc has been studied with the aid electron mieroseope. On annealing, it is observed that some grow rather than shrink, and this attributed to growth oxide on foil surface, which results formation vacancies. Loops shrink are considered lie beneath breaks surface layer such these regions able act normal manner as vacancy sinks. An estimation supersaturation near shrinking shows chemical stress low, climb rate presence a negligible analysed give value for stacking fault energy, $\gamma$. analysis loop based emission vacancies controlling process gives 290 erg/cm$^2$. A more reliable $\gamma$, thought be independent rate-controlling process, obtained by comparing prismatic loop. energy 220 erg/cm$^2$ deduced.

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