Inhomogeneous injection in III-nitride light emitters with deep multiple quantum wells
作者： Mikhail V. Kisin , Hussein S. El-Ghoroury
DOI: 10.1007/S10825-015-0673-5
关键词: Visible range 、 Electron 、 Optoelectronics 、 Light-emitting diode 、 Nitride 、 Carrier capture 、 Physics 、 Quantum well 、 Multiple quantum 、 Population
摘要: Excessive depth of optically active quantum wells (QWs) and related increase in QW population capacity is one the main causes inhomogeneous carrier injection unequal populations multiple-quantum-well III-nitride light emitters operating visible range. In turn, uneven distribution injected carriers across device's region creates imbalance between confined electron hole supports large residual charges, especially marginally located n-side p-side QWs. charges are strongly non-equilibrium as determined by dynamic balance capture recombination rates, with later being progressively faster excessively deep
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sci-hub.se 参考文章(43)
Ü Özgür, MJ Bergmann, HC Casey Jr, HO Everitt, AC Abare, S Keller, SP DenBaars, None, Ultrafast optical characterization of carrier capture times in InxGa1−xN multiple quantum wells Applied Physics Letters. ,vol. 77, pp. 109- 111 ,(2000) , 10.1063/1.126893
Igor Vurgaftman, Jerry R. Meyer, Electron Bandstructure Parameters Nitride Semiconductor Devices: Principles and Simulation. pp. 13- 48 ,(2007) , 10.1002/9783527610723.CH2
N. Tessler, G. Eisenstein, Distributed nature of quantum‐well lasers Applied Physics Letters. ,vol. 62, pp. 10- 12 ,(1993) , 10.1063/1.108827
A. Hangleiter, A. Grabmaier, G. Fuchs, Damping of the relaxation resonance in multiple‐quantum‐well lasers by slow interwell transport Applied Physics Letters. ,vol. 62, pp. 2316- 2318 ,(1993) , 10.1063/1.109403
B. Zhao, T. R. Chen, A. Yariv, Effect of state filling on the modulation response and the threshold current of quantum well lasers Applied Physics Letters. ,vol. 60, pp. 1930- 1932 ,(1992) , 10.1063/1.107154
S. Grzanka, G. Franssen, G. Targowski, K. Krowicki, T. Suski, R. Czernecki, P. Perlin, M. Leszczyński, Role of the electron blocking layer in the low-temperature collapse of electroluminescence in nitride light-emitting diodes Applied Physics Letters. ,vol. 90, pp. 103507- ,(2007) , 10.1063/1.2711765
Joachim Piprek, Z. M. Simon Li, Sensitivity analysis of electron leakage in III-nitride light-emitting diodes Applied Physics Letters. ,vol. 102, pp. 131103- ,(2013) , 10.1063/1.4799672
Dmitry S. Sizov, Rajaram Bhat, Aramais Zakharian, Jerome Napierala, Kechang Song, Donald Allen, Chung-en Zah, Impact of Carrier Transport on Aquamarine–Green Laser Performance Applied Physics Express. ,vol. 3, pp. 122101- ,(2010) , 10.1143/APEX.3.122101
P. M. Smowton, G. M. Lewis, A. Sobiesierski, P. Blood, J. Lutti, S. Osbourne, Non-uniform carrier distribution in multi-quantum-well lasers Applied Physics Letters. ,vol. 83, pp. 419- 421 ,(2003) , 10.1063/1.1593818
G. A. Kosinovsky, M. Grupen, K. Hess, Effect of carrier charge imbalance on the threshold current in diode lasers with thin intrinsic quantum wells Applied Physics Letters. ,vol. 65, pp. 3218- 3220 ,(1994) , 10.1063/1.112417