Effect of carrier charge imbalance on the threshold current in diode lasers with thin intrinsic quantum wells

作者: G. A. Kosinovsky , M. Grupen , K. Hess

DOI: 10.1063/1.112417

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摘要: This study is based on the results of a two‐dimensional self‐consistent laser simulator MINILASE for GaAs/AlGaAs system. It predicts that electron/hole density ratio in thin quantum wells (QW’s) diodes with intrinsic QW active regions (QW p‐i‐n lasers) can be significantly different from unity and depends doping near region. These deviations local charge neutrality have significant effects threshold.

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