Progress on GaInAsSb And InAsSbP Photodetectors for MiD-Infrared Wavelengths
作者： J. R. Bower , J. D. South , L. C. Dinetta , Z. A. Shellenbarger , M. G. Mauk
DOI: 10.1557/PROC-484-135
关键词: Optoelectronics 、 Epitaxy 、 Avalanche photodiode 、 Wavelength 、 Mid infrared 、 Avalanche multiplication 、 Infrared 、 Photodetector 、 Detector 、 Materials science
摘要: Progress on mid-infrared photodetectors fabricated by the liquid phase epitaxial growth of GaInAsSb, InAsSbP, and AlGaAsSb GaSb InAs substrates is reported. GaInAsSb p/n p-i-n detectors, InAsSbP detectors AlGaAsSb/GaInAsSb avalanche photodiode (APD) structures were fabricated. Preliminary results indicate that these devices can have higher detectivity with lower cooling requirements than commercially available in same wavelength range. Infrared junction made from showed cut-off wavelengths 2.3.fum 2.8. fum respectively. Room temperature background noiselimited (D*BLIP) 4 × 1010 cmHz1/2/W for 108 cmHz½/W was measured. Room-temperature multiplication gain 20 measured photodiodes.
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