Liquid phase epitaxy of Ga1−xAlxSb1−yAsy/GaSb and the effect of strain on phase equilibria
作者： A.N. Baranov , S.G. Konnikov , T.B. Popova , V.E. Umansky , Yu.P. Yakovlev
DOI: 10.1016/0022-0248(84)90153-2
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摘要: Abstract Ga 1− x Al Sb y As /GaSb epitaxial layers were grown at a temperature of about 550°C. Arsenic was introduced into the melt same from InAs or GaAs source wafers. It found that content in Ga-Al-Sb-Sb-As did not depend on initial concentration when liquid phase formed by saturating Ga-Al-Sb wafer. When wafers used for melt, fraction decreased with an increase concentration. has been demonstrated strain due to lattice mismatch between substrate and solid equilibrium changes conditions can result stabilization composition melt.
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sci-hub.se 参考文章(5)
G.B. Stringfellow, The importance of lattice mismatch in the growth of GaxIn1−xP epitaxial crystals Journal of Applied Physics. ,vol. 43, pp. 3455- 3460 ,(1972) , 10.1063/1.1661737
V.F. Dorfman, M.L. Shupegin, Shift in the phase and chemical equilibria in oriented crystallization Journal of Crystal Growth. ,vol. 52, pp. 710- 715 ,(1981) , 10.1016/0022-0248(81)90366-3
George Motosugi, Toshiaki Kagawa, Liquid-phase epitaxial growth and characterization of AlGaAsSb lattice-matched to GaSb substrates Journal of Crystal Growth. ,vol. 49, pp. 102- 108 ,(1980) , 10.1016/0022-0248(80)90068-8
Clifton G. Fonstad, Maurice Quillec, Stephen Garone, Gallium arsenide antimonide: The possibility of lattice‐matched LPE growth on InP substrates Journal of Applied Physics. ,vol. 49, pp. 5920- 5923 ,(1978) , 10.1063/1.324558
R. E. Nahory, M. A. Pollack, E. D. Beebe, J. C. DeWinter, M. Ilegems, The Liquid Phase Epitaxy of Al y Ga1 − y As1 − x Sb x and the Importance of Strain Effects near the Miscibility Gap Journal of The Electrochemical Society. ,vol. 125, pp. 1053- 1058 ,(1978) , 10.1149/1.2131620