The importance of lattice mismatch in the growth of GaxIn1−xP epitaxial crystals

摘要: The importance of lattice‐parameter mismatch between the GaAs substrate and GaxIn1−xP epitaxial layer on crystal growth properties has been investigated. Three major effects were observed: (i) morphology substrate/epitaxial‐layer interface found to be nearly perfect for a0 ≈ very poor including melt inclusions at other epitaxial‐layer compositions. (ii) dislocation density was depend ‐ varying from 105 > 108 cm−2. (iii) excess energy due perturb solid composition chemical‐equilibrium toward which minimizes mismatch; i.e., layers with x=0.51±0.01 are grown Ga–In–P liquids solidus compositions ranging 0.46 0.62. result is that under conditions used, highly could only near x=0.51 band gaps 1.9 eV. Other EG>1.9 ...