Electrical-field control of metal–insulator transition at room temperature in Pb(Zr0.2Ti0.8)O3/La1−xBaxMnO3 field-effect transistor
作者： Teruo Kanki , Young-Geun Park , Hidekazu Tanaka , Tomoji Kawai
DOI: 10.1063/1.1632028
关键词: Condensed matter physics 、 Ferroelectric ceramics 、 Metal–insulator transition 、 Transition temperature 、 Materials science 、 Ferromagnetism 、 Field-effect transistor 、 Ferroelectricity 、 Field (physics) 、 Electric field
摘要: We have constructed field-effect transistor structures that consist of a ferromagnetic (La,Ba)MnO3 channel and ferroelectric PbZr0.2Ti0.8O3 gate insulator with the aim controlling metal–insulator transition at room temperature by applying an electric field. Investigations revealed changed from 237.0 K to 242.0 for La0.90Ba0.10MnO3 layer remnant polarity (±50 μC/cm2) 280.5 283.0 (±26 μC/cm2) La0.85Ba0.15MnO3 layer. These shifts, which are linearly proportional magnitude polarization, induced accumulation charge due
scitation.org
harvard.edu
aip.org
sci-hub.se 参考文章(20)
R. A. Rao, D. Lavric, T. K. Nath, C. B. Eom, L. Wu, F. Tsui, THREE-DIMENSIONAL STRAIN STATES AND CRYSTALLOGRAPHIC DOMAIN STRUCTURES OF EPITAXIAL COLOSSAL MAGNETORESISTIVE LA0.8CA0.2MNO3 THIN FILMS Applied Physics Letters. ,vol. 73, pp. 3294- 3296 ,(1998) , 10.1063/1.122749
H. Ohno, D. Chiba, F. Matsukura, T. Omiya, E. Abe, T. Dietl, Y. Ohno, K. Ohtani, Electric-field control of ferromagnetism Nature. ,vol. 408, pp. 944- 946 ,(2000) , 10.1038/35050040
Wenbin Wu, K. H. Wong, C. L. Mak, C. L. Choy, Y. H. Zhang, Epitaxial Pb(Zr0.52Ti0.48)O3/La0.35Nd0.35Sr0.3MnO3 heterostructures for fabrication of ferroelectric field-effect transistor Journal of Applied Physics. ,vol. 88, pp. 2068- 2071 ,(2000) , 10.1063/1.1305859
M. Bibes, M.-J. Casanove, Ll. Balcells, S. Valencia, B. Martı́nez, J.-C. Ousset, J. Fontcuberta, Magnetotransport properties of fully strained epitaxial thin films of La2/3Ca1/3MnO3 grown on SrTiO3 Applied Surface Science. ,vol. 188, pp. 202- 208 ,(2002) , 10.1016/S0169-4332(01)00747-4
S. B. Ogale, V. Talyansky, C. H. Chen, R. Ramesh, R. L. Greene, T. Venkatesan, Unusual Electric Field Effects in Nd0.7Sr0.3MnO3. Physical Review Letters. ,vol. 77, pp. 1159- 1162 ,(1996) , 10.1103/PHYSREVLETT.77.1159
J. S. Moodera, Lisa R. Kinder, Terrilyn M. Wong, R. Meservey, Large magnetoresistance at room temperature in ferromagnetic thin film tunnel junctions. Physical Review Letters. ,vol. 74, pp. 3273- 3276 ,(1995) , 10.1103/PHYSREVLETT.74.3273
Jun Zhang, Hidekazu Tanaka, Teruo Kanki, Jae-Hyoung Choi, Tomoji Kawai, Strain effect and the phase diagram of La 1 − x Ba x MnO 3 thin films Physical Review B. ,vol. 64, pp. 184404- ,(2001) , 10.1103/PHYSREVB.64.184404
T. Wu, S. Ogale, J. Garrison, B. Nagaraj, Amlan Biswas, Z. Chen, R. Greene, R. Ramesh, T. Venkatesan, A. Millis, Electroresistance and electronic phase separation in mixed-valent manganites. Physical Review Letters. ,vol. 86, pp. 5998- 6001 ,(2001) , 10.1103/PHYSREVLETT.86.5998
S. S. P. Parkin, K. P. Roche, M. G. Samant, P. M. Rice, R. B. Beyers, R. E. Scheuerlein, E. J. O’Sullivan, S. L. Brown, J. Bucchigano, D. W. Abraham, Yu Lu, M. Rooks, P. L. Trouilloud, R. A. Wanner, W. J. Gallagher, Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited) Journal of Applied Physics. ,vol. 85, pp. 5828- 5833 ,(1999) , 10.1063/1.369932
J. Z. Sun, D. W. Abraham, R. A. Rao, C. B. Eom, Thickness-dependent magnetotransport in ultrathin manganite films Applied Physics Letters. ,vol. 74, pp. 3017- 3019 ,(1999) , 10.1063/1.124050