Hybrid perovskite-spinel magnetic tunnel junctions based on conductive ferrimagnetic NiFe2O4
作者： U. Lüders , G. Herranz , M. Bibes , K. Bouzehouane , E. Jacquet
DOI: 10.1063/1.2162037
关键词: Ferrimagnetism 、 Spintronics 、 Condensed matter physics 、 Electrical resistivity and conductivity 、 Spinel 、 Perovskite (structure) 、 Spin polarization 、 Materials science 、 Tunnel magnetoresistance 、 Magnetic moment
摘要: Ultrathin epitaxial films of NiFe2O4, when grown under specific conditions, show a large enhancement their magnetic moment and electrical conductivity. This allowed us to use such layers as electrodes in tunnel junctions. In this paper, we report on the observation magnetoresistance at low temperature La2∕3Sr1∕3MnO3∕SrTiO3∕NiFe2O4 From these results infer spin polarization up 45% for which stays constant ∼300K. NiFe2O4 can therefore be considered an alternative Fe3O4 high-temperature spin-polarized Fe oxide. Furthermore, our findings provide way design materials spintronics based stabilization nonthermodynamically stable phases spinel oxides.
scitation.org
harvard.edu
aip.org
sci-hub.se 参考文章(31)
M. Bowen, M. Bibes, A. Barthélémy, J.-P. Contour, A. Anane, Y. Lemaı̂tre, A. Fert, Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments Applied Physics Letters. ,vol. 82, pp. 233- 235 ,(2003) , 10.1063/1.1534619
Aria Yang, Zhaohui Chen, Xu Zuo, Dario Arena, J Kirkland, C Vittoria, VG Harris, None, Cation-disorder-enhanced magnetization in pulsed-laser-deposited CuFe2O4 films Applied Physics Letters. ,vol. 86, pp. 252510- ,(2005) , 10.1063/1.1952571
M. Bibes, K. Bouzehouane, A. Barthélémy, M. Besse, S. Fusil, M. Bowen, P. Seneor, J. Carrey, V. Cros, A. Vaurès, J.-P. Contour, A. Fert, Tunnel magnetoresistance in nanojunctions based on Sr2FeMoO6 Applied Physics Letters. ,vol. 83, pp. 2629- 2631 ,(2003) , 10.1063/1.1612902
V. Garcia, M. Bibes, A. Barthélémy, M. Bowen, E. Jacquet, J.-P. Contour, A. Fert, Temperature dependence of the interfacial spin polarization of La 2 / 3 Sr 1 / 3 MnO 3 Physical Review B. ,vol. 69, pp. 052403- ,(2004) , 10.1103/PHYSREVB.69.052403
SA Wolf, DD Awschalom, RA Buhrman, JM Daughton, von S von Molnár, ML Roukes, A Yu Chtchelkanova, DM Treger, Spintronics: A Spin-Based Electronics Vision for the Future Science. ,vol. 294, pp. 1488- 1495 ,(2001) , 10.1126/SCIENCE.1065389
J. G. Braden, J. S. Parker, P. Xiong, S. H. Chun, N. Samarth, Direct Measurement of the Spin Polarization of the Magnetic Semiconductor (Ga,Mn)As Physical Review Letters. ,vol. 91, pp. 056602- ,(2003) , 10.1103/PHYSREVLETT.91.056602
A. Fert, H. Jaffrès, Conditions for efficient spin injection from a ferromagnetic metal into a semiconductor Physical Review B. ,vol. 64, pp. 184420- ,(2001) , 10.1103/PHYSREVB.64.184420
P. Seneor, A. Fert, J.-L. Maurice, F. Montaigne, F. Petroff, A. Vaurès, Large magnetoresistance in tunnel junctions with an iron oxide electrode Applied Physics Letters. ,vol. 74, pp. 4017- 4019 ,(1999) , 10.1063/1.123246
Hidemi Toyosaki, Masashi Kawasaki, Tomoteru Fukumura, Kazunori Ueno, Masaki Nakano, A Ferromagnetic Oxide Semiconductor as Spin Injection Electrode in Magnetic Tunnel Junction Japanese Journal of Applied Physics. ,vol. 44, pp. 896- 898 ,(2005) , 10.1143/JJAP.44.L896
M. Julliere, Tunneling between ferromagnetic films Physics Letters A. ,vol. 54, pp. 225- 226 ,(1975) , 10.1016/0375-9601(75)90174-7