Opportunity of spinel ferrite materials in nonvolatile memory device applications based on their resistive switching performances.
作者： Wei Hu , Ni Qin , Guangheng Wu , Yanting Lin , Shuwei Li
DOI: 10.1021/JA305681N
关键词: Non-volatile memory 、 Optoelectronics 、 Chemistry 、 Resistive switching 、 Thermal effect 、 Yield (engineering) 、 Spinel 、 Spinel ferrite 、 Schottky diode 、 Thermal conduction
摘要: The opportunity of spinel ferrites in nonvolatile memory device applications has been demonstrated by the resistive switching performance characteristics of a Pt/NiFe 2 O 4 /Pt structure, …
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