Highly Uniform Resistive Switching Properties of Amorphous InGaZnO Thin Films Prepared by a Low Temperature Photochemical Solution Deposition Method
作者： Wei Hu , Lilan Zou , Xinman Chen , Ni Qin , Shuwei Li
DOI: 10.1021/AM500048Y
关键词:
摘要: … We report on highly uniform resistive switching properties of amorphous InGaZnO (a-IGZO) … based resistive switching devices exhibit long retention, good endurance, uniform switching …
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sci-hub.se 参考文章(28)
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