Dynamic evolution of conducting nanofilament in resistive switching memories.
作者： Jui-Yuan Chen , Cheng-Lun Hsin , Chun-Wei Huang , Chung-Hua Chiu , Yu-Ting Huang
DOI: 10.1021/NL4015638
关键词:
摘要: Resistive random access memory (ReRAM) has been considered the most promising next-generation nonvolatile memory. In recent years, switching behavior widely reported, and understanding mechanism can improve stability scalability of devices. We designed an innovative sample structure for in situ transmission electron microscopy (TEM) to observe formation conductive filaments Pt/ZnO/Pt real time. The corresponding current-voltage measurements help us understand ZnO film. addition, high-resolution (HRTEM) energy loss spectroscopy (EELS) have used identify atomic components filament/disrupted region, determining that conducting paths are caused by conglomeration zinc atoms. resistive is due migration oxygen ions, leading transformation between Zn-dominated ZnO(1-x) ZnO.
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