Multilevel resistance switching of individual Cu2S nanowires with inert electrodes

摘要: Owing to the enormous demand for data storage and its self-powering potential, resistive random access memory (ReRAM) devices have received much attention. Multilevel is advantageous in terms of efficiency energy saving. In present work, multilevel resistance has been demonstrated based on individual Cu2S nanowires with two inert (W) electrodes. Up five levels can be achieved, significantly enhancing density, by varying compliance current (C.C.). Compared previous works memory, exhibit outstanding performances lower operating voltage (Vset 105) longer retention time (>103 min). From in-situ scanning electron microscopy (SEM) transmission (TEM) analysis, switching (RS) behavior under high C.C. (> 1 μA) was found dominated Cu ion diffusion inside nanowire. On other hand, holes vacant lattice sites control RS low (<800 nA). The results temperature-dependent measurements resistivity also strongly support proposed mechanisms. facile fabrication capability shall facilitate realization density memristor applications.