Joule heating effect in nonpolar and bipolar resistive random access memory
作者： Mutsunori Uenuma , Yasuaki Ishikawa , Yukiharu Uraoka
DOI: 10.1063/1.4928661
关键词:
摘要: The position of the conductive filament (CF) and heating behaviour during a switching process in nonpolar bipolar resistive random access memories (ReRAMs) were evaluated using thermal analysis. CF was clearly observed from Joule at surface electrode on CF. did not change cycle, except case an unstable In ReRAM, spike-shaped temperature increments both forming set processes because overshoot current. However, increment ReRAM virtually consistent with profile electrical power.
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