摘要: Memristive devices are electrical resistance switches that can retain a state of internal resistance based on the history of applied voltage and current. These devices can store and …
S. F. Karg, G. I. Meijer, J. G. Bednorz, C. T. Rettner, A. G. Schrott, E. A. Joseph, C. H. Lam, M. Janousch, U. Staub, F. La Mattina, S. F. Alvarado, D. Widmer, R. Stutz, U. Drechsler, D. Caimi, Transition-metal-oxide-based resistance-change memoriesIbm Journal of Research and Development. ,vol. 52, pp. 481- 492 ,(2008) , 10.1147/RD.524.0481