Transition-metal-oxide-based resistance-change memories
作者： S. F. Karg , G. I. Meijer , J. G. Bednorz , C. T. Rettner , A. G. Schrott
DOI: 10.1147/RD.524.0481
关键词:
摘要: We provide a status report on the development of perovskite-based transition-metal-oxide resistance-change memories. We focus on bipolar resistance switching observed in Cr-doped …
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