Monolithic semiconductor integrated circuit ferroelectric memory device, and methods of fabricating and utilizing same
作者： George A. Rohrer , Larry McMillan
DOI:
关键词: Electrical engineering 、 Layer (electronics) 、 Potassium nitrate 、 Ferroelectricity 、 Optoelectronics 、 Electrical contacts 、 Semiconductor 、 Integrated circuit 、 Materials science 、 Angstrom
摘要: A monolithic semiconductor integrated circuit-ferroelectric device is disclosed together with the method of manufacturing same. The ferrelectric preferably consists a layer stable ferroelectric potassium nitrate disposed between electrical contacts positioned on opposite surfaces layer. has thickness less than 110 microns, and falling within range from 100 Angstrom units to 5,000 units. process structure multi-stepped particularly adapted for fabricating memory circuit.
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