Process for manufacturing a ferroelectric device and devices manufactured thereby

摘要: A process for manufacturing a ferroelectric device includes the steps of chemically cleaning substrate, followed by radio frequency etching substrate. The substrate is then pre-heated. first electrical contact formed on and over portion there vapor deposited stable thin film potassium nitrate. Then second at least part covering silicon monoxide vacuum assemblage contacts annealed approximately twenty-four hours temperature 160° C.