作者: Gurtej S. Sandhu , Pierre C. Fazan
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摘要: The invention is a storage cell capacitor and method for forming the having node electrode comprising barrier layer interposed between conductive plug an oxidation resistant layer. A thick insulative protects sidewalls of during deposition anneal dielectric high constant. comprises in material such as oxide or oxide/nitride. recessed from planarized top surface then formed recess. process continued with formation second layer, potion which removed to form opening exposing portion An deposited recess forms at least capacitor. Next constant overly plate fabricated