Method of forming high-dielectric-constant material electrodes comprising conductive sidewall spacers of same material as electrodes
作者： Pijush Bhattacharya , Scott R. Summerfelt , Yasushiro Nishioka , Kyung-ho Park
DOI:
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摘要: Generally, the present invention utilizes a lower electrode comprising sidewall spacer to form top surface with rounded corners on which HDC material can be deposited without substantial cracking. An important aspect of is that does not reduce electrical contact area between and layer as compared similar structure containing spacer. One embodiment microelectronic supporting (e.g. Si substrate 30) having principal surface, overlying layer, high-dielectric-constant BST 44) electrode. The comprises an adhesion TiN 36), unreactive Pt 42), SiO2 40) causing have corner. corner minimizes crack formation in layer.
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