Capacitor and method for forming the same
作者： Salman Akram
DOI:
关键词: Materials science 、 Electrode 、 Capacitance probe 、 Composite material 、 Vacuum variable capacitor 、 Semiconductor device 、 Layer (electronics) 、 Dielectric 、 Electrical engineering 、 Capacitor 、 Tantalum capacitor
摘要: A capacitor useful with semiconductor devices and a method for forming such is provided. The comprises contact formed in layer of an insulating material device; first electrode on the material, contacting having nodular shape; dielectric electrode; second material. Desirably, from high constant In another embodiment, includes barrier positioned between electrode.
lens.org 参考文章(32)
Charles Dennison, Pierre Fazan, Capacitor structures for dynamic random access memory cells ,(1993)
Guy T. Blalock, High accuracy via formation for semiconductor devices ,(1993)
Pijush Bhattacharya, Scott R. Summerfelt, Yasushiro Nishioka, Kyung-ho Park, Method of forming high-dielectric-constant material electrodes comprising conductive sidewall spacers of same material as electrodes ,(1995)
Hiang C. Chan, Pierre Fazan, Stacked H-cell capacitor and process to fabricate same ,(1991)
Gurtej Sandhu, Pierre Fazan, High dielectric constant capacitor and method of manufacture ,(1993)
Robert H. Eklund, Scott H. Prengle, Method for forming a thick base oxide in a BiCMOS process ,(1993)
Guy T. Blalock, Trung T. Doan, Method to slope conductor profile prior to dielectric deposition to improve dielectric step-coverage ,(1993)
Gurtej Sandhu, Sujit Sharan, Anand Srinivasan, Ceredig Roberts, Facet etch for improved step coverage of integrated circuit contacts ,(1997)
Thomas C. Holloway, Robert Groover, Roger A. Haken, Process for making integrated circuits having titanium nitride triple interconnect ,(1986)
Charles H. Dennison, Michael A. Walker, Semiconductor processing methods of forming stacked capacitors ,(1994)