Dielectric layer forming method and devices formed therewith

摘要: Embodiments in accordance with the present invention provide alternative materials, and methods of forming such that are effective as dielectric layers. Such embodiments include metal-containing layers over a silicon-containing substrate where layer is first formed treated to form layer. Dielectric by have constant greater than silicon dioxide, can an equivalent oxide thickness less 2 nanometers. useful variety semiconductor devices transistors, capacitors like integrated circuits from encompassed invention.