Metal-substituted transistor gates
作者： Leonard Forbes , Paul A. Farrar , Kie Y. Ahn
DOI:
关键词: Atomic layer deposition 、 Optoelectronics 、 Materials science 、 Gate oxide 、 Gate dielectric 、 Electrical engineering 、 Germanium 、 Substrate (electronics) 、 Carbon 、 Transistor 、 Silicon
摘要: One aspect of this disclosure relates to a method for forming transistor. According various embodiments, gate dielectric is formed on substrate, substitutable structure the dielectric, and source/drain regions transistor are formed. A desired material substituted provide dielectric. Some embodiments use carbon material, some silicon, germanium or silicon-germanium material. form high-k such as may be by an atomic layer deposition process, evaporated metal oxidation process. Other aspects provided herein.
google.nl 参考文章(72)
Kun-Chih Wang, Method of fabricating a metal-oxide-semiconductor transistor with a metal gate ,(1998)
Siang P. Kwok, Method of making a self-aligned MESFET using a substitutional gate with side walls ,(1986)
Leonard Forbes, Kie Ahn, Atomic layer deposited lanthanum aluminum oxide dielectric layer ,(2004)
Cyrus E. Tabery, Scott A. Bell, Srikanteswara Dakshina-Murthy, Philip A. Fisher, Method of using amorphous carbon film as a sacrificial layer in replacement gate integration processes ,(2002)
Lawrence Clevenger, Sunfei Fang, Method of forming organic spacers and using organic spacers to form semiconductor device features ,(2002)
Paul R. Besser, Qi Xiang, Matthew S. Buynoski, Metal gate with CVD amorphous silicon layer for CMOS devices and method of making with a replacement gate process ,(2000)
S. Harrison, P. Coronel, A. Cros, R. Cerutti, F. Leverd, A. Beverina, R. Wacquez, J. Bustos, D. Delille, B. Tavel, D. Barge, J. Bienacel, M.P. Samson, F. Martin, S. Maitrejean, D. Munteanu, J.L. Autran, T. Skotnicki, Poly-gate replacement through contact hole (PRETCH): a new method for high-k/metal gate and multi-oxide implementation on chip international electron devices meeting. pp. 291- 294 ,(2004) , 10.1109/IEDM.2004.1419136
Leonard Forbes, Kie Y. Ahn, Atomic layer deposited titanium aluminum oxide films ,(2005)
Hong-Jyh Li, CMOS Transistor With Dual High-k Gate Dielectric and Method of Manufacture Thereof ,(2012)
Leonard Forbes, Kie Ahn, Hybrid ALD-CVD of PrxOy/ZrO2 films as gate dielectrics ,(2004)