Hybrid ALD-CVD of PrxOy/ZrO2 films as gate dielectrics
作者： Leonard Forbes , Kie Ahn
DOI:
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摘要: The use of atomic layer deposition (ALD) to form a nanolaminate layered dielectric praseodymium oxide (PrXOY) and zirconium (ZrOZ) method fabricating such combination gate produces reliable structure for in variety electronic devices. is formed by depositing onto substrate surface using precursor chemicals, followed the repeating thin laminate structure. A may be used as insulator MOSFET, capacitor DRAM, tunnel flash memories, or NROM devices, because high constant (high-k) film provides functionality much thinner silicon dioxide film.
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