Semiconductor device with core and periphery regions

摘要: A method for forming a semiconductor device that includes line and space pattern with variable pitch critical dimensions in layer on substrate. The substrate first region (e.g., core region) second periphery region). sub-line the comprises of dimension (A) less than achievable by lithographic processes alone. Further, at least one including (B) lithography. uses two masking steps to form hard mask resolution limit single etch step transfer layer.